PASSIVATION OF COPPER BY LOW TEMPERATURE ANNEALING OF Cu/Mg/SiO2 BILAYERS-Reference-Cited by-同舟云学术

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PASSIVATION OF COPPER BY LOW TEMPERATURE ANNEALING OF Cu/Mg/SiO2 BILAYERS

Published:1996-10 Issue:1 Volume:152-153 Page:253-259
ISSN:0098-6445
Container-title:Chemical Engineering Communications
language:en
Short-container-title:Chemical Engineering Communications

Author:

WANG W.¹,DING P. J.¹,HYMES S.²,MURARKA S. P.²,LANFORD W. A.³

Affiliation:

1. a Physics Department , University at Albany , SU NY, Albany , New York , 12222

2. b Center for Integrated Electronics , Rensselaer Polytechnic Institution, Troy , New York , 12180 , U.S.A

3. c Physics Department , Uppsala Universitet , Box 530. S-751 21, Uppsala , Sweden

Publisher

Informa UK Limited

Subject

General Chemical Engineering,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/00986449608936566

Reference14 articles.

1. Advanced multilayer metallization schemes with copper as interconnection metal

2. Copper deposition and thermal stability issues in copper-based metallization for ULSI technology

3. Refractory Metal Nitride Encapsulation for Copper Wiring

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials;Journal of Applied Physics;2021-01-21

2. Potential of low-resistivity Cu2Mg for highly scaled interconnects and its challenges;Applied Surface Science;2021-01

3. Low temperature transport of Al into and through copper starting with Cu/Al/SiO2 bilayers;Journal of Applied Physics;1999-02

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