1. D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Scultz, L. Su, S. Luce, J. Slattery, 1997 IEEE International Electron Devices Meeting, IEEE, 1997, pp. 773–776.
2. Elemental vacancy diffusion database from high-throughput first-principles calculations for fcc and hcp structures
3. Advanced copper interconnections for silicon CMOS technologies
4. T. Nogami, 2019 IEEE Electron Devices Technology and Manufacturing Conference, IEEE, 2019, pp. 38–40.
5. J. Kelly, J.H.-C. Chen, H. Huang, C.K. Hu, E. Liniger, R. Patlolla, B. Peethala, P. Adusumilli, H. Shobha, T. Nogami, T. Spooner, E. Huang, D. Edelstein, D. Canaperi, V. Kamineni, F. Mont, S. Siddiqui, 2016 IEEE International Interconnect Technology Conference/Advanced Metallization Conference, IEEE, 2016, pp. 40–42.