Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials-Reference-Cited by-同舟云学术

Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials

Published:2021-01-21 Issue:3 Volume:129 Page:035301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Linghan¹^ORCID,Kumar Sushant²^ORCID,Yahagi Masataka¹,Ando Daisuke¹,Sutou Yuji¹^ORCID,Gall Daniel²^ORCID,Sundararaman Ravishankar²^ORCID,Koike Junichi¹^ORCID

Affiliation:

1. Department of Materials Science, Tohoku University, Sendai 980-8579, Japan

2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Funder

JSPS KAKENHI

Semiconductor Research Corporation

the New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0026837

Reference82 articles.

1. Global (interconnect) warming

2. Technology and reliability constrained future copper interconnects. I. Resistance modeling

3. Reliability challenges for copper interconnects

4. The conductivity of thin metallic films according to the electron theory of metals

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