Swift heavy ions-induced degradation on the electrical characteristics of silicon NPN power transistors
Author:
Affiliation:
1. Department of Studies in Physics, University of Mysore, Mysore, India
2. Department of PG Studies in Physics, JSS College, Mysore, India
3. Inter University Accelerator Centre, New Delhi, India
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1667356
Reference25 articles.
1. Synergistic effects of NPN transistors caused by combined proton irradiations with different energies
2. Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions
3. Swift heavy-ion irradiation effects on electrical and defect properties of NPN transistors
4. A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs
5. Environmental conditions effect on characteristics of some unijunction and bijunction semiconductor devices
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