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Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions

  • Published:2014-01 Issue: Volume:735 Page:198-201
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Liu Chaoming,Li Xingji,Yang Jianqun,Rui Erming

Funder

National Natural Science Foundation of China

the China Postdoctoral Science Foundation

Special Foundation of China Postdoctoral Science

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Swift heavy ions-induced degradation on the electrical characteristics of silicon NPN power transistors;Radiation Effects and Defects in Solids;2019-09-20

2. Evolution of radiation defects in NPN bipolar junction transistors irradiated by 3 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04

3. Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10

4. Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different Ion Species;IEEE Transactions on Nuclear Science;2017-01

5. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09
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