The dependence of proton energy on the parametric degradation in silicon bipolar junction transistors-Reference-Cited by-同舟云学术

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The dependence of proton energy on the parametric degradation in silicon bipolar junction transistors

Published:2023-04-27 Issue:7-8 Volume:178 Page:1012-1024
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Hegde Vinayakprasanna N.¹,Bharathi M. N.²,Pradeep T. M.³,Gnana Prakash A. P.⁴

Affiliation:

1. Department of Physics, Vidyavardhaka College of Engineering, Mysuru, India

2. Department of Electronics, Yuvaraja College, Mysuru, India

3. Department of Biomedical and Robotics Engineering, Mysore University School of Engineering, Mysuru, India

4. Department of Studies in Physics, University of Mysore, Mysuru, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2023.2204525

Reference17 articles.

1. Analytical model for total ionizing dose-induced excess base current in PNP BJTs

2. Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation

3. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

4. A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

5. Application of Gallium Nitride Technology in Particle Therapy Imaging

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