Production of radiation defects in silicon at different temperatures-Reference-Cited by-同舟云学术

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Production of radiation defects in silicon at different temperatures

Published:1980-01 Issue:1-4 Volume:48 Page:19-23
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Glaser E.,Götz G.,Wesch W.,Frey H.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008209222

Reference11 articles.

1. Analysis of disorder distributions in boron implanted silicon

2. Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directions

3. Wesch, W. 1978. Thesis, Jena.

4. Spatial distribution of energy deposited into atomic processes in ion-implanted silicon

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1. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04

2. Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon;MRS Proceedings;1992

3. Optical Effects of High Energy Implantations in Semiconductors;physica status solidi (b);1989-05-01

4. Residual disorder in silicon after anneal of high dose through oxide arsenic implants;Nuclear Instruments and Methods in Physics Research;1983-05

5. Radiation damage and near edge optical properties of nitrogen implanted gallium arsenide;physica status solidi (a);1982-03-16

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