Residual disorder in silicon after anneal of high dose through oxide arsenic implants-Reference-Cited by-同舟云学术

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Residual disorder in silicon after anneal of high dose through oxide arsenic implants

Published:1983-05 Issue: Volume:209-210 Page:683-687
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Hagmann D.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Residual lattice damage in As‐implanted and annealed Si

2. Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations

3. Residual disorder in Si from oxygen recoils in annealed ``through‐oxide'' arsenic implants

4. Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples

5. Production of radiation defects in silicon at different temperatures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EXPERIMENTAL ANNEALING AND ACTIVATION;Ion Implantation Science and Technology;1988

2. Effect of microstructure on the arsenic profile in implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986-06

3. DAMAGE ANNEALING IN SILICON AND ELECTRICAL ACTIVITY;Ion Implantation Science and Technology;1984

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