Residual lattice damage in As‐implanted and annealed Si-Reference-Cited by-同舟云学术

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Residual lattice damage in As‐implanted and annealed Si

Published:1976-01 Issue:1 Volume:13 Page:391-395
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Mader S.,Michel A. E.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.568927

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of dislocation loops in CeO2irradiated with high energy Krypton and Xenon;Philosophical Magazine;2013-12

2. Structural Integrity and Crystal Defect Generation in VLSI/ULSI Devices;Journal of The Electrochemical Society;1990-01-01

3. Rapid thermal processing, an integral part of shallow junction formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

4. The influence of the heating rate on the annealing behaviour of arsenic-implanted silicon;Semiconductor Science and Technology;1988-10-01

5. A systematic analysis of defects in ion-implanted silicon;Applied Physics A Solids and Surfaces;1988-01

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