Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon

Abstract

ABSTRACTExperiments were conducted to determine the sample temperature dependence of ion-beaminduced in-plane stress in silicon. Implantations were carried out for B+, Ar+ and Ti+ at various dose ranges and different silicon temperatures. The ion-beam-induced surface stress was measured by using a newly developed technique, which has a high sensitivity. A large abnormal stress was observed for B+ implantation at room temperature. The results show that the silicon temperature has a significant effect on the ion-beam-induced stress. The influence of temperature on stress curves were presented. This effect is consistent with the temperature effect on the ionbeam-induced amorphization of silicon. However, the effect on chemically active ions, such as B+, is significant, indicating that some preferable temperature can be used for minimizing ionimplantation-induced stress.