The formation of a continuous amorphous layer by room‐temperature implantation of boron into silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341122
Reference8 articles.
1. ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON
2. Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface
3. The Formation of Amorphous Silicon by Light Ion Damage
4. The crystalline to amorphous transformation in silicon
5. High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors
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