The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process
Author:
Affiliation:
1. Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E103.C/6/E103.C_2019FUP0006/_pdf
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5. [5] S. Zhu, J. Chen, M.-F. Li, S.J. Lee, J. Singh, C.X. Zhu, A. Du, C.H. Tung, A. Chin, and D.L. Kwong, “N-type Schottky barrier source and drain MOSFET using ytterbium silicide,” IEEE Electron Device Lett., vol.25, no.8, pp.565-567, Aug. 2004. DOI: 10.1109/LED.2004.831582 10.1109/led.2004.831582
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