Spatial distribution of energy deposited into atomic processes in ion-implanted silicon-Reference-Cited by-同舟云学术

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Spatial distribution of energy deposited into atomic processes in ion-implanted silicon

Published:1970-01 Issue:1 Volume:6 Page:77-87
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Brice D. K.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008235048

Reference23 articles.

1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

2. ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS

3. Sigmund, P. and Sanders, J. B. Proc. Int. Con. Applications of Ion Beam to Semiconductor Technology. Edited by: Glotin, P. pp.215Grenoble: Centre d'études Nucléire.

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1. Ion Beam-Induced Damages;Low-Energy Ion Irradiation of Materials;2022

2. A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40–360 keV Molybdenum in Silicon;Japanese Journal of Applied Physics;1999-01-15

3. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15

4. The influence of ion implantation conditions on defect formation and amorphisation in silicon;Radiation Effects and Defects in Solids;1994-09

5. Solution of the kinetic equation for the deposited energy distribution in the power cross section model;Journal of Physics: Condensed Matter;1994-05-30

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