Theoretical assessments of major physical processes involved in the depth resolution in sputter profiling
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578208222785
Reference71 articles.
1. Secondary−ion mass spectrometry and its use in depth profiling
2. Sputtering in the surface analysis of solids: A discussion of some problems
3. Evaluation of concentration-depth profiles by sputtering in SIMS and AES
4. Die Analyse monomolekularer FestkörperoberflÄchenschichten mit Hilfe der SekundÄrionenemission
5. Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann
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2. Large area smoothing of surfaces by ion bombardment: fundamentals and applications;Journal of Physics: Condensed Matter;2009-05-12
3. Sputter-depth profiling for thin-film analysis;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2003-11-25
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5. Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary-ion mass spectrometry (SIMS);Fresenius' Journal of Analytical Chemistry;2001-07-01
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