Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann-Reference-Cited by-同舟云学术

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Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann

Published:1979-04 Issue:4 Volume:18 Page:425-426
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Shimizu R.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00899698.pdf

Reference12 articles.

1. G.K.Wehner: InMethods of Surface Anaiysis, ed. by A.W.Czanderna (Elsevier Sci. Pub. Co., New Vork 1975) Chap. 1

2. A.Bennighoven: Z. Physik230, 403 (1970)

3. S.Hofmann: Appl. Phys.9, 59 (1976)

4. S.Hofmann: Appl. Phys.13, 205 (1977)

5. Reader may refer to W.Schockley, J.R.Pierce: Proc. Inst. Radio Engrs.26, 3 (1938); and as a textbook, for instante, to

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1. Light-reflection-induced changes in the line shape of sputtered atoms;Physica Scripta;2020-01-01

2. Quantitative Compositional Depth Profiling;Springer Series in Surface Sciences;2012-06-01

3. Compositional depth profiling by sputtering;Progress in Surface Science;1991-01

4. The effect of atomic-scale etch pit formation on depth resolution in sputter profiling;Surface and Interface Analysis;1990-07

5. On the development of increasing surface roughness during ion sputtering;Thin Solid Films;1987-08

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