EPR of defects in silicon-on-insulator structures
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578608209615
Reference15 articles.
1. A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
2. A study of silicon oxides prepared by oxygen implantation into silicon
3. Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
4. Epitaxial silicon layers grown on ion‐implanted silicon nitride layers
5. High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon Nitride Substrates, Masks and Dielectrics in Thin-Film Devices on Insulators;Si Silicon;1991
2. Observation of the localized Si dangling-bondPbdefect at the Si/Si3N4interface;Physical Review B;1989-02-01
3. Low-temperature ESR study of PbO defects residing in the (111) Si/native oxide interface;Applied Surface Science;1987-10
4. Paramagnetic centers at Si‐SiO2interfaces in silicon‐on‐insulator films;Applied Physics Letters;1987-05-18
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