Observation of the localized Si dangling-bondPbdefect at the Si/Si3N4interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.2864/fulltext
Reference33 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
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3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
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