Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals-Reference-Cited by-同舟云学术

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Published:2014-05-28 Issue:20 Volume:115 Page:204301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hiller D.,Zelenina A.,Gutsch S.,Dyakov S. A.,López-Conesa L.,López-Vidrier J.,Estradé S.,Peiró F.,Garrido B.,Valenta J.,Kořínek M.,Trojánek F.,Malý P.,Schnabel M.,Weiss C.,Janz S.,Zacharias M.

Funder

DFG

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4878699

Reference67 articles.

1. Silicon quantum dot nanostructures for tandem photovoltaic cells

2. Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

3. Silicon nanocrystals in an oxide matrix for thin film solar cells with 492mV open circuit voltage

4. Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices

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