Paramagnetic centers at Si‐SiO2interfaces in silicon‐on‐insulator films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97798
Reference16 articles.
1. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
2. Silicon-on-insulator by oxygen ion implantation
3. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
4. EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+implantation
5. EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+implantation
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