Effects of 29Si and 1H on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

Author:

Frantz Elias B.12ORCID,Michalak David J.3ORCID,Harmon Nicholas J.4ORCID,Henry Eric M.3,Flatté Michael E.5ORCID,King Sean W.2ORCID,Clarke James S.3,Lenahan Patrick M.16ORCID

Affiliation:

1. Intercollege Graduate Degree Program in Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Intel Supplier Technology Industry Development, Intel Corporation, Hillsboro, Oregon 97124, USA

3. Intel Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA

4. Department of Physics and Engineering Science, Costal Carolina University, Conway, South Carolina 29526, USA

5. Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA

6. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

Defense Threat Reduction Agency

Intel Corporation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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