The role of point defects generated in the crystalline region in ion beam induced epitaxial crystallization of silicon
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420159608211546
Reference37 articles.
1. Ion-beam-induced epitaxial crystallization and amorphization in silicon
2. A defect model for ion-induced crystallization and amorphization
3. Amorphization of Silicon by Ion Irradiation: The Role of the Divacancy
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