On the high-dose effect in the case of ion implantation of silicon-Reference-Cited by-同舟云学术

On the high-dose effect in the case of ion implantation of silicon

Published:2004-11 Issue:11 Volume:38 Page:1260-1262
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tetelbaum D. I.,Gerasimov A. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1823055.pdf

Reference9 articles.

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2. N. I. Gerasimenko, A. V. Dvurechenskii, S. I. Romanov, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. (Leningrad) 7, 2195 (1973) [Sov. Phys. Semicond. 7, 1461 (1973)].

3. F. F. Morehead and B. L. Crowder, Radiat. Eff. 6(1–2), 27 (1970).

4. V. I. Vedeneev, L. V. Gurvich, V. N. Kondrat’ev, V. A. Medvedev, and E. L. Frankevich, Energies for Splitting the Chemical Bonds. Ionization Potentials and Electron Affinity (Akad. Nauk SSSR, Moscow, 1962) [in Russian].

5. A. I. Titov, V. S. Belyakov, P. Cardwell, and G. Farrel, Radiat. Eff. 139, 189 (1996).

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