Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?-Reference-Cited by-同舟云学术

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Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?

Published:2008-10 Issue:19-20 Volume:403 Page:3424-3428
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ovsyannikov Sergey V.,Shchennikov Vsevolod V.,Shchennikov Vladimir V.,Ponosov Yuri S.,Antonova Irina V.,Smirnov Sergey V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

2. Properties of silicon oversaturated with implanted hydrogen

3. Silicon on insulator material technology

4. Application of hydrogen ion beams to Silicon On Insulator material technology

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic analysis on implantation effects of hydrogen ions and copper ions into 4H-SiC;Applied Surface Science;2024-08

2. Hydrogen Ion Implantation Induced Cutting Behavior Variation in Plunge Cutting of the Monocrystalline Silicon;Nanomanufacturing and Metrology;2021-01-28

3. Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining;Micromachines;2018-07-21

4. Effects of non-amorphizing hydrogen ion implantation on anisotropy in micro cutting of silicon;Journal of Materials Processing Technology;2015-11

5. Structure and composition of silicon microarrays subjected to cyclic insertion and extraction of lithium;Technical Physics;2015-04

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