Depth distribution of silicon-ion induced defects in crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366339
Reference12 articles.
1. EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon
2. Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons
3. Defect distributions in MeV ion bombarded silicon
4. Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon
5. Defect studies in oxygen‐ion‐irradiated silicon‐based metal‐insulator‐semiconductor structures
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