The effect of high iron-ion implantation doses on the X-ray emission spectra of silicon-Reference-Cited by-同舟云学术

The effect of high iron-ion implantation doses on the X-ray emission spectra of silicon

Published:2006-02 Issue:2 Volume:48 Page:218-223
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Zatsepin D. A.,Yanenkova E. S.,Kurmaev É. Z.,Cherkashenko V. M.,Shamin S. N.,Cholakh S. O.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783406020041.pdf

Reference14 articles.

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3. A. Maĭzel’, G. Leonkhard, and R. Sargan, X-ray Spectra and Chemical Bonding (Naukova Dumka, Kiev, 1981) [in Russian].

4. D. A. Zatsepin, V. R. Galakhov, B. A. Gizhevskii, E. Z. Kurmaev, V. V. Fedorenko, A. A. Samokhvalov, and S. V. Naumov, Phys. Rev. B: Condens. Matter 59, 211 (1999).

5. B. A. Gizhevskii, V. R. Galakhov, D. A. Zatsepin, L. V. Elokhina, T. A. Belykh, E. A. Kozlov, S. V. Naumov, V. L. Arbuzov, K. V. Shal’nov, and M. Neumann, Fiz. Tverd. Tela (St. Petersburg) 44(7), 1318 (2002) [Phys. Solid State 44 (7), 1380 (2002)].

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