Rubidium focused ion beam induced platinum deposition-Reference-Cited by-同舟云学术

Rubidium focused ion beam induced platinum deposition

Published:2023-06-20 Issue:4 Volume:41 Page:
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:

Author:

Li Y.¹^ORCID,Xu S.¹^ORCID,Sezen M.²^ORCID,Bakan Misirlioglu F.²^ORCID,Vredenbregt E. J. D.¹^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands

2. Sabanci University Nanotechnology Research and Application Center (SUNUM) 2 , 34956 Istanbul, Tü

Abstract

This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Trimethylplatinum [(MeCp)Pt(Me)3] was used as the deposition precursor. Under similar beam energies, 8.5 keV for Rb+ and 8.0 keV for Ga+, and beam current, near 10 pA, the two ion species deposited Pt films at 0.90 and 0.73 μm3/nC, respectively. Energy-dispersive x-ray spectroscopy shows that Rb+ FIBID-Pt consists of similar Pt contents (49% for Rb+ FIBID and 37% for Ga+ FIBID) with much lower primary ion contents (5% Rb and 27% Ga) than Ga+ FIBID-Pt. The deposited material was also measured to have a resistivity of 8.1×104 μΩcm for the Rb+ FIBID-Pt and 5.7×103 μΩcm for Ga+ FIBID-Pt.

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0002609/18299190/042803_1_6.0002609.pdf

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