Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, Eindhoven 5600 MB, The Netherlands
2. Thermo Fisher Scientific 2 , Achtseweg Noord 5, Eindhoven 5651 GG, The Netherlands
Abstract
Funder
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0002643/18008698/042804_1_6.0002643.pdf
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1. Recent advances in focused ion beam technology and applications
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4. Recent advances in FIB–TEM specimen preparation techniques
5. Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation
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