Thermal versus radiation-assisted defect annealing in β-Ga2O3
Author:
Affiliation:
1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo 1 , P.O. Box 1048 Blindern, N-0316 Oslo, Norway
2. Department of Materials Science and Engineering, Korea University 2 , Seoul 02841, Republic of Korea
Abstract
Funder
Research Council of Norway
Directorate for higher education and skills in Norway
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002388/16777065/023101_1_online.pdf
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