Surface potential and morphology issues of annealed (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxides-Reference-Cited by-同舟云学术

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Surface potential and morphology issues of annealed (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxides

Published:2004 Issue:4 Volume:22 Page:2113
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ludeke R.,Lysaght P.,Cartier E.,Gusev E.,Chudzik M.,Foran B.,Bersuker G.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2Films Evaluated by Scanning Capacitance Microscopy;Japanese Journal of Applied Physics;2007-09-07

2. Atomic scale model interfaces between high-khafnium silicates and silicon;Physical Review B;2007-06-05

3. Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy;Journal of Applied Physics;2007-04-15

4. Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si;Journal of Applied Physics;2007-01

5. Thermal ammonia nitridation on HfO2 and hafnium silicates thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

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