Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2717600
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
3. Extended Abstracts of the International Workshop on Gate Insulator (IWGI);Aoyama T.
4. Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films
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