Comparison of Lateral Non-uniformity Phenomena between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region
Author:
Publisher
The Electrochemical Society
Link
https://iopscience.iop.org/article/10.1149/1.3206631/pdf
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner;ECS Journal of Solid State Science and Technology;2014
2. Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization;Microelectronic Engineering;2013-04
3. Characterization of Edge Fringing Effect on the $C$ –$V$ Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High-$\kappa$ Dielectric;IEEE Transactions on Electron Devices;2012-03
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