1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs-Reference-Cited by-同舟云学术

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1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

Published:2005-04-21 Issue:4B Volume:44 Page:2330-2335
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saitoh Motofumi,Terai Masayuki,Ikarashi Nobuyuki,Watanabe Heiji,Fujieda Shinji,Iwamoto Toshiyuki,Ogura Takashi,Morioka Ayuka,Watanabe Koji,Tatsumi Toru,Watanabe Hirohito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TiN/HfSiON for Analog Applications of nMuGFETs;ECS Transactions;2019-12-16

2. Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth;Journal of Vacuum Science & Technology A;2019-12

3. Titanium coverage for plasma-induced uniform HfSiON film from Hf nanoscale islands on SiO2/Si;Journal of Vacuum Science & Technology A;2018-11

4. Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si;Journal of Vacuum Science & Technology A;2018-09

5. UTBOX SOI Devices with High-k Gate Dielectric Under Analog Perfomance;ECS Transactions;2012-08-30

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