Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2Films Evaluated by Scanning Capacitance Microscopy-Reference-Cited by-同舟云学术

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Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2Films Evaluated by Scanning Capacitance Microscopy

Published:2007-09-07 Issue:9A Volume:46 Page:5992-5999
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Naitou Yuichi,Ando Atsushi,Ogiso Hisato,Kamohara Siro,Yano Fumiko,Nishida Akio,Watanabe Heiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. Conductive atomic force microscopy studies of thin SiO2 layer degradation

2. Detection and Characterization of Stress-Induced Defects in Gate SiO2Films by Conductive Atomic Force Microscopy

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Surface potential and morphology issues of annealed (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxides

5. Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films

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1. Carrier distribution imaging using ∂C/∂z-mode scanning nonlinear dielectric microscopy;Review of Scientific Instruments;2019-08

2. Center of Excellence for Atomically Controlled Fabrication Technology;Journal of Nanoscience and Nanotechnology;2011-04-01

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