Thermal ammonia nitridation on HfO2 and hafnium silicates thin films
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Ultrathin (<4nm) SiO2 and Si–O–N gate dielectrics layers for silicon microelectronics: Understanding the processing, structure and physical and electrical limits;Green;J. Appl. Phys.,2001
2. High-K gate dielectrics: Current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
3. Physical and electrical characterization of hafnium oxide and hafnium silicate sputtered films;Callegari;J. Appl. Phys.,2001
4. Compatibility of silicon gates with hafnium-based gate dielectrics;Gilmer;Microelectron. Eng.,2003
5. Electrical characterization of highly reliable ultrathin hafnium oxide gate dielectric;Kang;IEEE Electron Dev. Lett.,2000
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness;Journal of Applied Physics;2013-01-28
2. Handling, purification and recovery of isotopically enriched water or gases for isotopic tracing experiments with ion beam analysis in electrochemistry and physics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-02
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