Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation-Reference-Cited by-同舟云学术

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Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Published:2018-11 Issue:6 Volume:36 Page:061301
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Barsukov Yuri V.¹,Volynets Vladimir²,Kobelev Anton A.³,Andrianov Nikolai A.⁴,Tulub Alexander V.⁵,Smirnov Alexander S.¹

Affiliation:

1. Department of Plasma Physics, Peter the Great Saint-Petersburg Polytechnic University, Polytechnic Street 29, Saint-Petersburg 195251, Russia

2. Samsung Electronics Co., Ltd., Mechatronics R&D Center, 1 Samsung Electronics-ro, Hwasung-City, Gyeonggi-do 445701, South Korea

3. Center for Advanced Studies, Peter the Great Saint-Petersburg Polytechnic University, Polytechnic Street 29, Saint-Petersburg 195251, Russia

4. Svetlana-Rost JSC, Engels Ave. 27, Saint-Petersburg 194156, Russia

5. Saint-Petersburg State University, Universitetskaya Emb. 7-9, Saint-Petersburg 199034, Russia

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5044647

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

2. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05

3. Plasma Atomic Layer Etching of SiO₂ and Si₃N₄ with Low Global Warming C₄H₃F₇O Isomers;ACS Sustainable Chemistry & Engineering;2023-04-13

4. Low Global Warming C₄H₃F₇O Isomers for Plasma Etching of SiO₂ and Si₃N₄ Films;ACS Sustainable Chemistry & Engineering;2022-08-02

5. Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules;Applied Surface Science;2021-07

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