Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching-Reference-Cited by-同舟云学术

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Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching

Published:2005-07 Issue:4 Volume:23 Page:713-719
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lee Gyeo-Re,Min Jae-Ho,Lee Jin-Kwan,Kang Se-Koo,Moon Sang Heup

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1946712

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Global Warming C₄H₃F₇O Isomers for Plasma Etching of SiO₂ and Si₃N₄ Films;ACS Sustainable Chemistry & Engineering;2022-08-02

2. Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment;Comptes Rendus Chimie;2018-08

3. Angular dependences of SiO 2 etch rates at different bias voltages in CF 4 , C 2 F 6 , and C 4 F 8 plasmas;Thin Solid Films;2017-09

4. Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices;Applied Surface Science;2016-01

5. Effect of process parameters on sidewall damage in deep silicon etch;Journal of Micromechanics and Microengineering;2015-02-12

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