Effect of process parameters on sidewall damage in deep silicon etch
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0960-1317/25/i=3/a=035024/pdf
Reference24 articles.
1. Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
2. High aspect ratio silicon etch: A review
3. BSM 7: RIE lag in high aspect ratio trench etching of silicon
4. Aspect ratio dependent etching lag reduction in deep silicon etch processes
5. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography
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