High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications
Author:
Affiliation:
1. IMEC, Kapeldreef 75, Leuven 3001, Belgium
Funder
IMEC
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c01611
Reference23 articles.
1. Meyer, R.; Schloss, L.; Brewer, J.; Lambertson, R.; Kinney, W.; Sanchez, J.; Rinerson, D. Oxide Dual-Layer Memory Element for Scalable Non-Volatile Cross-Point Memory Technology 2008 9th Annual Non-volatile Memory Technology Symposium (NVMTS); IEEE: Pacific Grove, CA, USA, 2008; pp 1–5.
2. 3D cross-point phase-change memory for storage-class memory
3. Ovonic threshold switching characteristics
4. Ravsher, T.; Degraeve, R.; Garbin, D.; Fantini, A.; Clima, S.; Donadio, G. L.; Kundu, S.; Hody, H.; Devulder, W.; Van Houdt, J.; Afanas’ev, V.; Delhougne, R.; Kar, G. S. Polarity-Dependent Threshold Voltage Shift in Ovonic Threshold Switches: Challenges and Opportunities 2021 IEEE International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2021; pp 28.4.1–28.4.4.
5. Ravsher, T.; Garbin, D.; Fantini, A.; Degraeve, R.; Clima, S.; Donadio, G.; Kundu, S.; Hody, H.; Devulder, W.; Van Houdt, J.; Afanas’ev, V.; Delhougne, R.; Kar, G. Enhanced Performance and Low-Power Capability of SiGeAsSe-GeSbTe 1S1R Phase-Change Memory Operated in Bipolar Mode 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits); IEEE: Honolulu, HI, USA, 2022; pp 312–313.
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