Oxide dual-layer memory element for scalable non-volatile cross-point memory technology-Reference-Cited by-同舟云学术

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Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

Published:2008 Issue: Volume: Page:
ISSN:
Container-title:2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS)
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Author:

Meyer Rene,Schloss Lawrence,Brewer Julie,Lambertson Roy,Kinney Wayne,Sanchez John,Rinerson Darrell

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4731179/4731180/04731194.pdf?arnumber=4731194

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications;ACS Applied Nano Materials;2023-06-03

3. Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures;Russian Microelectronics;2023-04

4. Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures;Микроэлектроника;2023-03-01

5. Oxygen nonstoichiometry and electrical transport properties of Pr1-Ca MnO3 ceramics;Journal of the European Ceramic Society;2022-12

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