Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology-Reference-Cited by-同舟云学术

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

Published:2015-03 Issue:2 Volume:33 Page:022204
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Drescher Maximilian,Naumann Andreas,Sundqvist Jonas,Erben Elke,Grass Carsten,Trentzsch Martin,Lazarevic Florian,Leitsmann Roman,Plaenitz Philipp

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4913947

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