Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination-Reference-Cited by-同舟云学术

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
language:
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Author:

Raffel Y.¹,Olivo R.¹,Lederer M.¹,Muller F.¹,Hoffmann R.¹,Ali T.¹,Mertens K.¹,Pirro L.²,Drescher M.²,Beyer S.²,Kampfe T.¹,Seidel K.¹,Eng L. M.³,Heitmann J.⁴

Affiliation:

1. Fraunhofer IPMS, CNT,Dresden,Germany,01099

2. GlobalFoundries,Dresden,Germany,01099

3. TU Dresden,Dresden,Germany,01099

4. Technische Universität Bergakademie Freiberg,Freiberg,Germany,09599

Funder

BMWi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779277.pdf?arnumber=9779277

Reference13 articles.

1. Noise as a diagnostic tool for quality and reliability of electronic devices

2. Low-Frequency Noise In Advanced Mos Devices

3. Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations

4. Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

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