Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation-Reference-Cited by-同舟云学术

Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation

Published:2022-03 Issue: Volume:746 Page:139116
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Nadimi Ebrahim,Rahimi Arash,Masoumi Saeed,Schreiber Michael

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. The integration of sub-10nm gate oxide on MoS2 with ultra-low leakage and enhanced mobility;Yang;Sci. Rep.,2015

5. The emergence of the local moment molecular spin transistor;Hao;J. Phys. Condens. Matter,2020

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