The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep11921.pdf
Reference31 articles.
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3. Liu, K. et al. Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Lett. 12, 1538–1544 (2012).
4. Fang, H. et al. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts. Nano Lett. 12, 3788–3792 (2012).
5. Sarkar, D. et al. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors. ACS Nano 8, 3992–4003 (2014).
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