Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions-Reference-Cited by-同舟云学术

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Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions

Published:2024-05-12 Issue: Volume:29 Page:1-4
ISSN:
Container-title:2024 IEEE International Memory Workshop (IMW)
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Author:

Lederer Maximilian¹,Müller Franz¹,Hoffmann Raik¹,Olivo Ricardo¹,Raffel Yannick¹,Yang Shouzhuo¹,De Sourav¹,Potjan Roman¹,Ostien Oliver¹,Altawil Abdelrahman¹,Sünbül Ayse¹,Lehninger David¹,Kämpfe Thomas¹,Seidel Konrad¹

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems IPMS,Center Nanoelectronic Technologies CNT,Dresden,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10536936/10536916/10536975.pdf?arnumber=10536975

Reference20 articles.

1. FeFET: A versatile CMOS compatible device with game-changing potential

2. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

3. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

4. A review of emerging non-volatile memory (NVM) technologies and applications

5. Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application

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