Quantitative determination of dopant dose in shallow implants using the low energy x-ray emission spectroscopy technique
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SIMS-EDX system for the quantitative analysis of solids;Surface and Interface Analysis;2012-06-15
2. New Evaluation Method for Cross-Contamination of Ion Implantation by Using Grazing Angle Incidence PIXE in Photo-Resist;IEEE Transactions on Semiconductor Manufacturing;2010-08
3. Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
4. The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors;Microscopy and Microanalysis;2006-07-14
5. Quantitative analysis of ultrashallow junction of sub-50 nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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