The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors-Reference-Cited by-同舟云学术

The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors

Published:2006-07-14 Issue:4 Volume:12 Page:340-346
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:Microsc Microanal

Author:

Staub Pierre-François

Abstract

We describe the recent introduction of low energy X-ray emission spectrometry as a metrology technique to control the fabrication process in the integrated circuit industry. The benefits of this particular analytical method and the wide field of potential applications are addressed.

Publisher

Cambridge University Press (CUP)

Subject

Instrumentation

Reference3 articles.

1. Staub, P.-F. (1998).IntriX: A numerical model for electron probe analysis at high depthresolution. Part I—Theoretical description.X-Ray Spect 27,43–57.

2. Bonnelle, C. , Vergand, F. , Jonnard, P. , André, J.-M. , Staub, P.-F. , Avila, P. , Chargelègue, P. , Fontaine, M.-F. , Laporte, D. , Paquier, P. , Ringuenet, A. , & Rodriguez, B. (1994).Instrument for research on interfaces and surfaces.Rev Sci Instrum 65,3466–3471.

3. Staub, P.-F. , Hombourger, C. , & Schuhmacher, M. (2002).Quantitative determination of dopant dose in shallow implants usingthe low energy X-ray emission spectroscopy technique.J Vac Sci Technol B 20,436–440.

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