过渡金属(TM = V, Cr, Mn, Fe, Co, Ni)掺杂GeSe的高 温铁磁半导体薄膜
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s40843-023-2657-2.pdf
Reference67 articles.
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4. Chen L, Yang X, Yang F, et al. Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering. Nano Lett, 2011, 11: 2584–2589
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