Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO2:GeMn NCs/n-Si) grown by MBE-Reference-Cited by-同舟云学术

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Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO2:GeMn NCs/n-Si) grown by MBE

Published:2024-06 Issue: Volume:224 Page:113191
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Amdouni S.^ORCID,Aouassa M.,Bouaabdellaoui M.,Aladim A.K.,Yahyaoui M.

Publisher

Elsevier BV

Reference52 articles.

1. Mn-doped Ge self-assembled quantum dots via dewetting of thin films;Aouassa;Appl. Surf. Sci.,2017

2. Mn-doping effects on structural and magnetic properties of Ge nanocrystals on insulator;Aouassa;Appl. Surf. Sci.,2018

3. High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications;Aouassa;J. Mater. Sci. Mater. Electron.,2022

4. Opportunities and challenges for spintronics in the microelectronics industry;Dieny;Nat Electron,2020

5. Review on spintronics: Principles and device applications

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1. Corrigendum to “Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO2:GeMn NCs/n-Si) grown by MBE” [Vacuum 224 (2024) 113191];Vacuum;2024-09

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