Corrigendum to “Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO2:GeMn NCs/n-Si) grown by MBE” [Vacuum 224 (2024) 113191]
Author:
Amdouni S.,Aouassa M.,Bouaabdellaoui M.,Aladim A.K.,Yahyaoui M.