Realization of Room-Temperature Ferromagnetism and of Improved Carrier Mobility in Mn-Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments-Reference-Cited by-同舟云学术

Realization of Room-Temperature Ferromagnetism and of Improved Carrier Mobility in Mn-Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments

Published:2007-11-05 Issue:21 Volume:19 Page:3496-3500
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park S. Y.,Kim P. J.,Lee Y. P.,Shin S. W.,Kim T. H.,Kang J.-H.,Rhee J. Y.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference35 articles.

1. Magnetoelectronics

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Injection and detection of a spin-polarized current in a light-emitting diode

4. Electrical spin injection in a ferromagnetic semiconductor heterostructure

5. Electronic structure origins of polarity-dependent high-TC ferromagnetism in oxide-diluted magnetic semiconductors

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